Current-voltage characteristics of Schottky diode simulated using semiconductor device equations

摘要

The Poisson's equation and the drift diffusion equations have been used to simulate the current-voltage characteristics of Schottky diode. The potential variation inside the bulk semiconductor near the metal-semiconductor contact was estimated first and then the current as a function of bias through the Schottky diode using silicon parameters were calculated over a wide temperature range. From the simulated current-voltage characteristics the diode parameters were extracted by fitting of current-voltage data into thermionic emission diffusion current equation. The derived barrier parameters are analysed to study the effect of various parameters, e.g. semiconductor thickness, doping concentration, temperature dependence of carrier mobility and energy band gap, on the current-voltage characteristics of Schottky diode in view of the thermionic emission diffusion current equations.