A 10-bit 50 MS/s SAR ADC in 65 nm CMOS with on-chip reference voltage buffer

摘要

This paper presents the design of a 10-bit, 50 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with an on-chip reference voltage buffer implemented in 65 nm CMOS process. The speed limitation on SAR ADCs with off-chip reference voltage and the necessity of a fast-settling reference voltage buffer are elaborated. Design details of a high-speed reference voltage buffer which ensures precise settling of the DAC output voltage in the presence of bondwire inductances are provided. The ADC uses bootstrapped switches for input sampling, a double-tail high-speed dynamic comparator and split binary-weighted capacitive array charge redistribution DACs. The split binary-weighted array DAC topology helps us to achieve low area and less capacitive load and thus enhances power efficiency. Top-plate sampling is utilized in the DAC to reduce the number of switches. In post-layout simulation which includes the entire pad frame and associated parasitics, the ADC achieves an ENOB of 9.25 bits at a supply voltage of 1.2 V, typical process corner and sampling frequency of 50 MS/s for near-Nyquist input. Excluding the reference voltage buffer, the ADC consumes 697 ON and achieves an energy efficiency of 25 fj/conversion-step while occupying a core area of 0.055 mm(2). (C) 2015 Elsevier ay. All rights reserved.