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Uniformity Evaluation of Lattice Spacing of 28Si Single Crystals

机译:28Si单晶晶格间距的均匀性评估

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The uniformity of the lattice spacing of silicon crystals was evaluated by the self-referenced lattice comparator with a resolution of 3times 10^{mathrm {mathbf {-9}}} . Lattice strain measurements were performed for the sample 10.5 cut from 28Si ingot (Avo28), which was used to determine the Avogadro constant. The mapping results for samples 4.R1, XINT, and 9.R1 performed in the previous works have also been re-evaluated. The 4.R1 in the seed side of the ingot and the XINT in the middle of the ingot have small distribution of lattice spacing. The standard deviations of the lattice spacing distribution for the 4.R1 and XINT were 4.8times 10^{mathrm {mathbf {-9}}} and 5.5times 10^{mathrm {mathbf {-9}}} , respectively. In contrast, the 9.R1 and the 10.5 samples cut from the tail side of the ingot have a larger distribution of lattice spacing. These lattice spacing distributions in the ingot are consistent with the impurity distribution in the ingot.
机译:硅晶体的晶格间距的均匀性通过自引用晶格比较器以3倍10 ^ {mathrm {mathbf {-9}}}的分辨率进行评估。对从28Si铸锭(Avo28)切下的10.5样品进行晶格应变测量,该样品用于确定Avogadro常数。先前工作中执行的样本4.R1,XINT和9.R1的映射结果也已重新评估。晶锭种子侧的4.R1和晶锭中间的XINT的晶格间距分布较小。 4.R1和XINT的晶格间距分布的标准偏差分别为4.8 x 10 ^ {mathbf {-9}}}和5.5 x 10 ^ {mathrm {mathbf {-9}}}}。相反,从铸锭尾部切下的9.R1和10.5样品的晶格间距分布较大。晶锭中的这些晶格间距分布与晶锭中的杂质分布一致。

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