Silicon single crystal wafer, in-plane uniformity evaluation method of the amount of precipitated oxygen, manufacturing method of a silicon single crystal

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer in which BMD is uniformly formed and which has a uniform gettering power.;SOLUTION: When a silicon single crystal wafer is subjected to a low-temperature heat treatment of 600°C to 700°C and thereafter subjected to a high-temperature heat treatment of 750°C to 1,050°C, among sections obtained by dividing the diameter of the silicon single crystal wafer into every length of ≥10 mm and ≤15 mm, sections in which the ratio [Op]max/[Op]min of a maximum [Op]max to a minimum [Op]min in differences [Op] in oxygen concentration between before the low-temperature heat treatment and after the high-temperature heat treatment is ≤1.25 account for ≥85% of the whole divided sections. According to an X-ray topographic image, no clear deposited oxygen striation is observed and a silicon single crystal wafer exhibiting a uniform oxygen deposit amount in the wafer plane is made.;COPYRIGHT: (C)2013,JPO&INPIT