Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450-700°C

摘要

The processes associated with transformations of oxygen-related radiation-induced defects in Czochralski-grown silicon crystals irradiated with fast electrons or neutrons and subjected to heat-treatment in the temperature range of 450-700°C have been studied by means of IR absorption spectroscopy. It is found that, upon disappearance of the VO_3 and VO_4 defects, new vacancy-oxygen-related complexes, which give rise to a number of vibrational absorption bands in the wavenumber range of 980-1115 cm~(-1), are formed. It is argued that these complexes are radiation-induced VO_m centers {m ≥ 5), which serve as nucleation centers of enhanced oxygen precipitation in silicon.