机译:估计相变存储材料薄膜光带隙的特点
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
Ryazan State Radio Engineering University Ryazan 390005 Russia;
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
Kurnakov Institute of General and Inorganic Chemistry Russian Academy of Sciences Moscow 119991 Russia;
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
The Hebrew University the Edmond J. Safra Campus Jerusalem 9190401 Israel;
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
National Research University of Electronic Technology Moscow Zelenograd 124498 Russia;
phase change memory; chalcogenides; Ge_2Sb_2Te_5 (GST225); thermal annealing; spectrophotometry; optical properties; Tauc method; optical band gap;
机译:热蒸发制备的Ge-Te-Ga薄膜的相变和光学带隙行为
机译:氮掺杂对Sb_2Te_3薄膜相变特性和光带隙的影响
机译:热壁沉积CdSe_xTe_(1-x)薄膜的结构相变和光带隙弯曲
机译:Vis-IR激光引起的聚碳酸酯-SiO_2薄膜的折射率,光学带隙和吸收边的变化
机译:用于薄膜太阳能电池的高禁带吸收剂和缓冲材料的开发。
机译:InSe薄膜中与成分有关的结构相变和光学带隙调整
机译:用杂交功能理论洞察带结构和带空隙的化学气相沉积合成和光学性质。
机译:三氧化钨锂薄膜光学带隙的研究