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A 100-MHz Breakdown-Resilient Power Converter With Fully Monolithic Implementation on Nanoscale CMOS Process

机译:一个在纳米级CMOS工艺上完全单片实现的100MHz击穿弹性功率转换器

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摘要

A monolithic switched-capacitor power converter is designed in the nanoscale CMOS technology, employing a two-stage system architecture to mitigate overvoltage breakdown risk. The efficiency impact of various parasitic components is analyzed for design optimization on both the topology level and the device level. An external capacitorless low-dropout regulator with a wide bandwidth and a high power supply rejection ratio is introduced, removing high-frequency ripples and enabling a fast load transient response. The proposed design was implemented with the 180-nm CMOS process. At a switching frequency of 100 MHz, it regulates at 0.8 V, with a maximum power efficiency of 60%. When the load current switches between 1.5 and 15 mA, responds within 45 ns, with a voltage droop below 45 mV.
机译:采用纳米级CMOS技术设计了单片式开关电容器电源转换器,采用两级系统架构来减轻过压击穿风险。分析了各种寄生组件的效率影响,以在拓扑级别和设备级别上进行设计优化。引入了具有宽带宽和高电源抑制比的外部无电容器低压差稳压器,可消除高频纹波并实现快速的负载瞬态响应。拟议的设计是通过180 nm CMOS工艺实现的。在100 MHz的开关频率下,它稳定在0.8 V,最大功率效率为60%。当负载电流在1.5和15 mA之间切换时,在45 ns内做出响应,电压下降低于45 mV。

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