On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

摘要

This paper presents the design, fabrication, and characterization of the SiC JBSFET (junction barrier Schottky (JBS) diode integrated MOSFET). The fabrication of the JBSFET adopted a novel single metal, single thermal treatment process to simultaneously form ohmic contacts on n+, p+ implanted regions, and Schottky contact on the n-4H-SiC epilayer. The presented SiC JBSFET uses 40% smaller wafer area because the diode and MOSFET share the edge termination as well as the current conducting drift region. The proposed single chip solution of MOSFET/JBS diode functionalities eliminates the parasitic inductance between separately packaged devices allowing a higher frequency operation in a power converter.