Deposition influence on AlN films Hao Cheng et al at the School of Materials Engineering, CPPL Lab, Nanyang Tech. University, Singapore have focused on AlN thin films. With novel thermal properties, chemical stability, high hardness and acoustic velocity and large electromechanical coupling coefficient, as well as a wide band gap, these have received considerable interest as promising candidate electronic material for thermal dissipation, dielectric and passivation layers, surface acoustic wave devices, and photoelectric devices. Many techniques, such as sputtering CVD, laser CVD, pulsed laser ablation and MBE have been used to prepare AlN thin films on various substrates. In most cases the deposition temperatures are quite high. High temperature deposition has the disadvantage of the degradation of the substrate and the AlN thin films during deposition due to thermal damage. Hence deposition of AlN thin films at low temperatures has become increasingly important and valuable. Sputtering technique is promising under circumstances where low temperature deposition and con-formal coatings are needed.
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