A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications

摘要

This paper presents a new topology for realizing a single-ended inductor employing a minimum number of passive components. The active inductor achieves a high quality factor of 895 over a frequency range of 1700 MHz. Its self-resonance frequency is 5.5 GHz. The achieved range of sweep for inductance (L) varies from 3.55 to 26 nH. The circuit draws 0.5 mA current from 1.0-V supply and occupies an effective active area of 22 x 27.5 mu m(2), while the noise voltage is less than 15: 6 nV/root Hz. The proposed inductor is designed and simulated in a 90-nm TSMC MS/RF CMOS process.