A 1.5-V high-Q CMOS active inductor for IF/RF wireless applications

摘要

In this paper, a new circuit configuration of VHF CMOS transistor-only active inductor which allows very high frequency operation under low power supply voltages (>2 V) is proposed. Gain enhancement techniques are applied to reduce the inductor losses achieving high-Q and wide operating bandwidth. HSPICE simulations using process parameters from a 0.35-/spl mu/m CMOS technology show that the proposed floating active inductor operates under a single 1.5-V power supply voltage, exhibiting a self-resonant frequency of 2.5 GHz and a quality factor greater than 120 (phase errors >0.50) over the operating frequencies extending from 500 MHz to 1 GHz.