A Comprehensive Nonlinear GaAs FET Model Suitable for Active and Passive Circuits Design

摘要

This paper describes an improved nonlinear GaAs FET model and its parameter extraction procedure for al- most all operating conditions such as the small-signal condition, the power saturated condition, and the controlled-resistance con- dition. The model is capable of modeling the gate voltage depen- dent drain current and its derivatives in the saturated region as well as the drain voltage dependent drain current and its deriva- tives in the linear region.