Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance

摘要

This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM_3) with the use of the linearizer.