Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs

摘要

The linearity of the GaAs Field Effect Transis- tor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (Cgs) and drain-source current (Ids) for the FETs. However, previously suggested anal- ysis methods of GAAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (Cgs or Ids) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of Cgs and Ids simultaneously.