Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT

摘要

The effect of temperature (-25 to1000C) on two-tone Intermodulation Distortion (IMD) characteristics of InGaP/GaAs microwave DHBTs is studied. This is carried out through measurement with the results being compared to a simple analytical technique. The results indicated that varying the temperature has a significantimpact on the IMD characteristics. The variations of small signal parameters with temperature, extracted from S-parameter measurements,are then used to carefully analysethe IMD characteristics and identify the physical origin of the change in the non-linearity. In addition, theeffectsofvarying input power on the non-linearities has been studied.This analysis has been reported for the first time and is important in understanding the non-linear characteristics of the microwave device.