Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

摘要

Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe_3Si/Ge structures. It was found that very small x_(min) values (2-3%) were achieved in a wide temperature range of 60-200℃ under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe_3Si/Ge structures was guaranteed up to 400℃. These results suggested that growth at a low temperature (< 200℃) under the stoichiometric condition was essential to obtain high quality Fe_3Si/Ge structures with sharp interfaces.