Narrow-gap III-V semiconductor technology: lattice-mismatched growth and epitaxial lift-off for heterogeneous integration

摘要

Narrow-gap III-V semiconductors, such as InAs, InGaAs/InAlAs with high indium compositions, InSb, and InGaSb/InAlSb, are promising material systems for high-speed and low-power-consumption electron device applications. In this article, we discuss lattice-mismatched growth of the narrow-gap semiconductors on GaAs substrates, focusing on the behaviors and properties of crystalline defects. In addition, we present our proposal and results of epitaxial lift-off technology for the lattice-mismatched growth of the narrow-gap semiconductors. We consider that this technology will open up new possibilities of heterogeneous integration of the narrow-gap semiconductor devices.