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Study on Quantum Electro-Dynamics in Vertical MOSFET

机译:垂直MOSFET中的量子电动力学研究

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We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.
机译:我们从量子电动力学的角度研究了垂直MOSFET(V-MOSFET)中电子的传输特性。为了获得通过V-MOSFET通道的电子传输特性的直观图像,我们采用分裂算子方法求解了真实空间中与时间相关的Shrodinger方程。我们从源头向V-MOSFET的主体中注入了电子波包,并追踪了主体和漏极区域中电子波功能的时间发展。我们成功地证明了电子波功能通过人体电位的共振状态传播。我们提出的方法为V-MOSFET在量子极限上的载流子动力学开启了定量和直观的讨论。

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