AlNセラミック基板上に集積した共鳴トンネルペア発振器

摘要

AlNセラミック基板上に共鳴トンネルダイオードペア発振器を作製し，その特性を調べた.作製には微小デバイスブロックの配置・配線技術を用いた.これにより,大容量のチップコンデンサをRTDの近傍に配置することが可能になった.49GHzで安定した発振が得られ,100kHzオフセットで-100dBc/Hzという良好な位相ノイズ特性が得られた.%The RTD-pair oscillators were designed and fabricated on an A1N ceramic substrate employing novel integration process based on assembly of small device blocks. Using this process chip capacitors were mounted close to the oscillator without large parasitic inductance. This can relax the severe condition for bias stability. Stable oscillations were observed in the fabricated circuits at 35-50 GHz. Good single sideband phase noise of-100 dBc/Hz at 100-kHz offset was also observed for the fabricated circuit.