Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator

摘要

Pentacene-based organic field-effect transistors (OFETs) with HfON gate insulators annealed at 140℃ were fabricated, and the effect of peripheral region on the electrical properties of the OFETs was investigated. It was found that the gate leakage current of the OFET without isolation is comparable to the drain current due to the effect of peripheral region. Moreover, the OFET without isolation exhibits current crowding in the I_D-V_D characteristics. Notably, the gate leakage current of the OFET is greatly decreased by patterning of pentacene film. Meanwhile, the OFET with patterned pentacene channel layer shows excellent linear and saturation behaviors in I_D-V_D characteristics.