In this study, the results of the study of thin film deposition conditions of AZO thin film by RF magnetron sputtering method were reported. AZO thin films have been prepared by RF reactive magnetron sputtering with various growth parameters, including Al-doping amount on Zn target, oxygen pressure ratio and substrate temperatures. The resistivity, transmittance and crystal orientation of these films was investigated as a function of various growth parameters and causes of characteristic change were examined. As a result, a minimum resistivity of 4.38 ×10~(-4)Ω cm and the average transmittance of 93% in the visible range was obtained for the films deposited at oxygen pressure ratio of 12%, Al-doping ratio of 4% and substrate temperature of 350℃.%RFマグネトロンスパッタ法によるAZO薄膜の成膜条件に関する検討結果について報告する．放電ガスAr中に反応性ガスO_2を混入させた反応性スパッタリングを用い，メタルターゲットZnの上にAlペレットを配置し，酸素濃度割合，Alドーピング量，成膜温度を変化させた．抵抗乳 透過率，結晶配向性を評価し，各種成膜条件における特性変化の原因について検討した．最適形成条件の探索の結果，酸素濃度割合12％，Alドーピング量4％，成膜温度350℃にすることにより，最小抵抗率4．38×10~(-4)Ωcmが得られ，可視光平均透過率は93％が得られた．
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