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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting
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Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting

机译:浇铸法制备厚膜压电锆钛酸钛酸铅陶瓷谐振器

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摘要

In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tapecasting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ;5;T33/;5;0 measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e33 in the range of 15 to 26 C/m2, piezoelectric strain constants (d31) in the range of -169 ?????? 10-12 C/N to -314 ?????? 10-12 C/N, electromechanical coupling coefficients (kt) in the range of 0.48 to 0.53, and k31 in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.
机译:在本文中,通过流延加工制造了厚度低至数十微米的厚膜压电锆钛酸铅钛酸盐(PZT)陶瓷谐振器。为压电换能器的应用,准备了成分接近相变相边界并添加了不同掺杂剂的PZT陶瓷谐振器。这些厚膜PZT谐振器的材料特性表征对于器件设计和应用至关重要。为了进行特性表征,使用最近开发的归一化电阻抗谱方法从厚膜谐振器的电学测量中确定机电系数以及复数的压电,弹性和介电系数。在这项工作中,已经制造并表征了九个PZT厚膜谐振器,并且使用了两种不同类型的谐振器,即厚度纵向模式和横向模式,来表征材料特性。将结果与通过IEEE标准方法确定的结果进行了比较,它们一致。结果发现,根据PZT配方和掺杂剂,在2 kHz时测得的相对介电常数; 5; T 33 /; 5; 0 这些厚膜在1527至4829的范围内,压电应力常数(e 33 在15至26 C / m 2 的范围内,压电应变常数( d 31 )的范围为-169 ?????? 10 -12 C / N到-314 ?????? 10 -12 C / N,机电耦合系数(k t )在0.48至0.53的范围内,k 31 在0.35至0.38的范围内。结果表明,流延加工可用于制造高质量的PZT厚膜谐振器,提取的材料常数可用于器件设计和应用。

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