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Nano-domains and related phenomena in congruent lithium tantalate single crystals studied by scanning nonlinear dielectric microscopy

机译:扫描非线性介电显微镜研究全钽酸锂单晶的纳米域和相关现象

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Nanodomains and their related phenomena in congruent lithium tantalate (CLT) single crystals are studied using scanning nonlinear dielectric microscopy (SNDM). We carried out two specific investigations: super higher order nonlinear dielectric spectroscopy studies on thick multi-domain congruent CLT single crystals and electrical conduction in nanodomains in thin CLT single crystals. First, without using a special sharp tip, we achieve improved lateral resolution in SNDM through the measurement of super higher order nonlinearity up to the fourth order. We also found a marked enhancement of nonlinear dielectric constants when the applied tip-sample voltage exceeded a particular threshold value. This is due to domain nucleation activated by a huge electric field under the tip. Low frequencies (less than a few hundred hertz) do not enhance nonlinearity. An effectively lower electric field caused by ion conduction in the sample under the tip is a possible reason for the frequency-dependent characteristics of the enhanced nonlinearity for the applied voltage. Finally, electrical current flow behavior was investigated for nanodomains formed in a thin CLT single-crystal plate. When the nanodomains are relatively large, with diameters of about 100 nm, current flow is detected along the domain wall. However, when the nanodomains were about 40 nm or smaller in size, current flowed through the entire nanodomain. Schottky-like rectifying behavior was observed. A clear temperature dependence of the current is found, indicating that the conduction mechanism for nanodomains in CLT may involve thermally activated carrier hopping.
机译:使用扫描非线性介电显微镜(SNDM)研究了全钽酸锂(CLT)单晶中的纳米域及其相关现象。我们进行了两个具体的研究:超高阶非线性电介质光谱学,研究了厚的多畴全色CLT单晶和薄CLT单晶中的纳米畴中的导电。首先,无需使用特殊的尖锐尖端,我们就可以通过测量直到四阶的超高阶非线性来实现SNDM中改进的横向分辨率。当施加的尖端采样电压超过特定阈值时,我们还发现非线性介电常数显着增强。这是由于尖端下方的巨大电场激活了畴核。低频(小于几百赫兹)不会增强非线性。由尖端下方样品中的离子传导引起的有效较低的电场可能是所施加电压增强非线性的频率相关特性的可能原因。最后,研究了在薄CLT单晶板上形成的纳米域的电流流动行为。当纳米域相对较大,直径约为100 nm时,沿着域壁会检测到电流。然而,当纳米域的尺寸为约40nm或更小时,电流流过整个纳米域。观察到肖特基样的整流行为。发现电流具有明显的温度依赖性,这表明CLT中纳米域的传导机制可能涉及热激活载流子跳跃。

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