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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Production data based optimal etch time control design for areactive ion etching process
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Production data based optimal etch time control design for areactive ion etching process

机译:基于生产数据的活性离子刻蚀工艺最佳刻蚀时间控制设计

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This paper addresses the issue of end point detection and etchntime control for a reactive ion etch process. Our approach involves thenuse of neural networks to model the functional relationship between annend point detection signal, as well as various in situ measurements, andnthe resulting film thickness remaining. An optimization algorithm isnthen employed to determine the optimal etch time based on the neuralnnetwork model in order to achieve the desired level of film thicknessnremaining. This circumvents the need for monitoring and operating onnnoisy end point detection signals typically associated with conventionalndetection schemes. Simulation studies based on production data arenpresented to further demonstrate the associated design procedures andnthe feasibility of the algorithm. Tested on data from 89 randomlynselected wafers, our controller yields a film thickness distributionnwith the standard deviation of 6.42 Å, a 50% improvement over thenscheme currently implemented in production
机译:本文讨论了反应性离子蚀刻工艺的终点检测和蚀刻时间控制的问题。然后,我们的方法涉及使用神经网络来建模终点检测信号之间的功能关系以及各种原位测量,以及由此产生的剩余膜厚。还没有采用优化算法来基于神经网络模型确定最佳刻蚀时间,以便保持所需的膜厚水平。这避免了监视和操作通常与常规检测方案相关的无用的端点检测信号的需要。提出了基于生产数据的仿真研究,以进一步证明相关的设计程序和算法的可行性。根据来自89个随机选择的晶圆的数据进行测试,我们的控制器产生的膜厚分布n标准偏差为6.42Å,比目前生产中实施的方案提高了50%

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