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Modeling of interconnect capacitance, delay, and crosstalk in VLSI

机译:VLSI中互连电容,延迟和串扰的建模

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摘要

Increasing complexity in VLSI circuits makes metal interconnection a significant factor affecting circuit performance. In this paper, we first develop new closed-form capacitance formulas for two major structures in VLSI, namely: (1) parallel lines on a plane and (2) wires between two planes, by considering the electrical flux to adjacent wires and to ground separately. We then further derive closed-form solutions for the delay and crosstalk noise. The capacitance models agree well with numerical solutions of three-dimensional (3-D) Poisson equation as well as measurement data. The delay and crosstalk models agree well with SPICE simulations.
机译:VLSI电路复杂性的增加使得金属互连成为影响电路性能的重要因素。在本文中,我们首先针对VLSI中的两个主要结构开发了新的闭式电容公式,即:(1)平面上的平行线和(2)两个平面之间的导线,考虑到相邻导线和地面的通量分别。然后,我们进一步导出延迟和串扰噪声的封闭式解决方案。电容模型与三维(3-D)泊松方程的数值解以及测量数据非常吻合。延迟和串扰模型与SPICE仿真非常吻合。

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