Pre-silicon parameter generation methodology using BSIM3 forcircuit performance-oriented device optimization

摘要

We present a physical parameter extraction methodology for BSIM3v3nto generate accurate pre-silicon parameters (parameters created beforendevice fabrication). Using this method, the parameters of the 0.20-Μmnprocess device can be generated from a 0.25-Μm technology with 5%naccuracy in a few minutes. We applied this method in optimizing thendevices of our microprocessor in the early stages of design