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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Visualized characterization of slurry film between wafer and padduring chemical mechanical planarization
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Visualized characterization of slurry film between wafer and padduring chemical mechanical planarization

机译:晶圆和化学机械平面化过程中焊盘之间浆膜的可视化表征

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摘要

Chemical mechanical planarization (CMP) has emerged recently as annindispensable processing technique for planarization in submicrometernmultilevel very large scale integration (VLSI). The demand from industrynfor fast material removal and a high degree of uniformity has been anserious challenge for the advancement of this key technology. Amongnvarious process aspects, the slurry flow between wafer and pad plays annimportant role in the pursuit of these goals. This study provides anvisualized characterization of the amount and distribution of the fluidnfilm between the wafer and pad. The fluid film is analyzed by thendigital picture obtained through the transparent carrier and dyed fluid.nThe effects of process parameters are extensively investigated,nincluding platen and carrier speed, pad design, rinsing location, andnflow rate of slurry and wafer size. Suggestions for process recipesnaiming at fast and uniform CMP are drawn based on the current results
机译:化学机械平面化(CMP)最近作为亚微米级多级超大规模集成(VLSI)中平面化的必不可少的加工技术而出现。对于该关键技术的发展,工业界对快速去除材料和高度均匀性的需求一直是严峻的挑战。在各个工艺方面,晶圆和焊盘之间的浆料流动在实现这些目标中起着重要作用。这项研究提供了可视化的表征,说明了晶圆和焊盘之间的液膜的数量和分布。然后通过透明载体和染色后的流体获得的数字图像对流体膜进行分析。n广泛研究了工艺参数的影响,包括压板和载体的速度,垫设计,冲洗位置,浆料的流速和晶片尺寸。根据当前结果,提出了在快速且均匀的CMP上命名工艺流程的建议

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