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Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC)

机译:模拟砷自动掺杂对外延硅膜薄层电阻的影响及其在统计过程控制(SPC)中的应用

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摘要

An epitaxial layer sheet resistance monitoring procedure has been developed to overcome the convolution between intentional epilayer doping and arsenic autodoping for multiwafer reactors. The procedure models the epilayer as an intentionally phosphorous-doped region plus an arsenic autodoped region by approximating the epilayer as two resistors in parallel. The resulting sheet resistance SPC monitoring procedure is sensitive to shifts in epilayer carrier concentration as well as arsenic autodoping induced by product lots.
机译:已经开发出外延层薄层电阻监测程序来克服多晶片反应器的有意外延层掺杂和砷自动掺杂之间的卷积。该程序通过将磊晶层近似为两个并联的电阻器,将磊晶层建模为有意掺磷的区域以及砷的自动掺杂区域。所得的薄层电阻SPC监控程序对外延层载流子浓度的变化以及产品批次引起的砷自动掺杂很敏感。

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