...
首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC)
【24h】

Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC)

机译:模拟砷自动对外延硅膜薄层电阻的影响及其在统计过程控制中的应用(SPC)

获取原文
获取原文并翻译 | 示例
           

摘要

An epitaxial layer sheet resistance monitoring procedure has been developed to overcome the convolution between intentional epilayer doping and arsenic autodoping for multiwafer reactors. The procedure models the epilayer as an intentionally phosphorous-doped region plus an arsenic autodoped region by approximating the epilayer as two resistors in parallel. The resulting sheet resistance SPC monitoring procedure is sensitive to shifts in epilayer carrier concentration as well as arsenic autodoping induced by product lots.
机译:已经开发了一种外延层电阻监测程序,以克服故意癫痫掺杂与多件器反应器的砷自动掺杂之间的卷积。该程序通过将副晶体近似于两个电阻器,作为有意磷掺杂区域和砷自动渗透区域模拟。所得到的薄层电阻SPC监测程序对癫痫载体浓度的偏移敏感,以及产品批次诱导的砷自动渗透。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号