Challenges in Lift-Off Process Using CAMP Negative Photoresist in III–V IC Fabrication

摘要

In III-V IC processing, lift-off patterning is universally used. Historically used negative resist has its limitations; hence the image reverse process using positive tone resist has been utilized as the main work horse in lift-off applications. Metal lift-off processes using a specially designed chemically amplified (CAMP) negative tone resist have been evaluated for thin and thick metal layers to have a varying degree of success. Liftoff using CAMP photoresists has made it possible to reduce cycle time (similar to 57% reduction in 1x theoretical cycle time per layer) and reduce cost (due to elimination of steps) as compared to the image reverse process. However, achieving consistent lift-off and critical dimension (CD) control presents challenges, which are discussed in this paper.