首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Study of TiN and TaN Underlayer Properties and Their Influence on W Growth
【24h】

Study of TiN and TaN Underlayer Properties and Their Influence on W Growth

机译:TiN和TaN底层性能及其对W生长的影响的研究

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) and tantalum nitride (TaN) underlayer films. The underlayers are analyzed by surface characterization techniques to obtain the differences in surface morphology and grain sizes that influence the growth of W on these films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of the W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.
机译:使用不同的氮化钛(TiN)和氮化钽(TaN)底层膜研究了钨(W)膜生长和电阻的变化。通过表面表征技术分析底层,以获得影响这些膜上W的生长的表面形态和晶粒尺寸的差异。用于TiN沉积的不同前驱物和工艺会影响W的生长和薄膜性能。重要的是,监视进入的TiN电阻的变化是W工艺认证的一部分。这样可以保持W工艺的稳定性,并减少由于错误故障而导致的Fab停机时间。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号