...
机译:用于2.5D集成的低寄生电容和低应力Si中介层的制造与表征
Department of Electrical and Mechanical Engineering, Xiamen University, Xiamen, China;
Department of Electrical-Optical Engineering, Navy Academy of Armament, Beijing, China;
Department of Electrical and Mechanical Engineering, Xiamen University, Xiamen, China;
Department of Electrical and Mechanical Engineering, Xiamen University, Xiamen, China;
College of Microelectronics, Peking University, Beijing, China;
College of Microelectronics, Peking University, Beijing, China;
Shenzhen Graduate School of Peking University, Peking University, Shenzhen, China;
Silicon; Parasitic capacitance; Glass; Through-silicon vias; Micromechanical devices; Integrated circuit interconnections; Substrates;
机译:铜中介层(LC–TSI)的基于Cu-RDL的2.5D低成本制造与组装
机译:用于基于插入器的2.5-D小孔集成的体系结构,芯片和包代码流,从而实现异构IP重用
机译:低k介质衬里的硅通孔制造及其对寄生电容和漏电流的影响
机译:用于2.5D集成的带气隙Si-TSV的SOI中介层的制造和表征
机译:多孔阳极氧化铝中介层工艺集成,制备,表征和评估
机译:集成低电容二极管的掺砷高电阻率硅外延层
机译:具有低寄生电容的局部底栅结构,用于介电电泳组装和悬浮纳米材料的电学表征