机译:TiN阻挡层对钨填充通孔接触电阻的影响
Technology/Process Research, IHP, Frankfurt, Germany;
Technology/Process Research, IHP, Frankfurt, Germany;
Technology/Process Research, IHP, Frankfurt, Germany;
Technology/Process Research, IHP, Frankfurt, Germany;
Technology/Process Research, IHP, Frankfurt, Germany;
Technology/Process Research, IHP, Frankfurt, Germany;
Failure analysis; Tungsten; Titanium nitride; Metallization; Contact resistance;
机译:钨覆盖层对低电阻n〜+-源极/漏极触点的硅化钇钇的影响
机译:通过使用钨势垒层,对基于AlGaInP的发光二极管的p型GaP热稳定的基于AuBe的欧姆接触
机译:先进的脉冲成核层和低电阻率钨处理降低了钨的接触和线电阻
机译:导电胶作为通孔填充到PCB中:填充形状和接触金属化对通孔电阻稳定性的影响
机译:在熔融金属撞击液滴下测量热接触电阻。
机译:等离子体电子通量对InGaN / GaN发光二极管p-GaN上超薄锡掺杂氧化铟接触层的无损溅射溅射的影响
机译:在氧等离子体激活的金晶种层上进行选择性化学镀镍,以制造低接触电阻的通孔和微结构