Conduction power loss in MOSFET synchronous rectifier withparallel-connected Schottky barrier diode

摘要

The conduction power loss in an MOSFET synchronous rectifier withna parallel-connected Schottky barrier diode (SBD) was investigated. Itnwas found that the parasitic inductance between the MOSFET and SBD has anlarge effect on the conduction power loss. This parasitic inductancencreates a current that is shared by the two devices for a certain periodnand increases the conduction power loss. If conventional devices arenused for under 1 MHz switching, the advantage of the low on-resistancenMOSFET will almost be lost. To reduce the conduction loss for 10 MHznswitching, the parasitic inductance must be a subnanohenley