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An analysis and experimental approach to MOS controlled diodesbehavior

机译:MOS控制二极管行为的分析和实验方法

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The metal oxide semiconductor (MOS)-controlled diode (MCD) is annew class of power semiconductor diode that can achieve ideal diodenperformance. In this paper, experimental verification of the MCD keynconcept is presented for the first time by using commercially availablenpower metal oxide semiconductor field effect transistors (MOSFETs)noperating as MCDs. Measurements of the reverse recovery currents andnreverse recovery charges of these “MCDs” are obtained andncompared with the body diodes of the MOSFETs. These measurements suggestnthat MCDs can reduce the reverse recovery current, storage charge, andnswitching loss significantly. Optimized MCD performances at 1.2 kV, 2.4nkV, and 4.5 kV are also predicted based on numerical simulations. Idealnperformance of the MCD close to that predicted by the device simulationnshould be obtained once an optimized MCD is developed
机译:金属氧化物半导体(MOS)控制的二极管(MCD)是可以实现理想二极管性能的新型功率半导体二极管。本文首次通过使用市售的用作MCD的功率金属氧化物半导体场效应晶体管(MOSFET)首次对MCD keynconcept进行了实验验证。获得了这些“ MCD”的反向恢复电流和反向恢复电荷的测量值,并与MOSFET的体二极管进行了比较。这些测量结果表明,MCD可以显着降低反向恢复电流,存储电荷和n开关损耗。根据数值模拟,还预测了MCD在1.2 kV,2.4nkV和4.5 kV时的最佳性能。一旦开发出优化的MCD,就应该获得接近于设备仿真预测的MCD的理想性能。

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