Proton and heavy ion upsets in GaAs MESFET devices

摘要

Proton and heavy SEU data has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths appear deeper than the 1 mu m depth expected. Critical charge does not scale linearly with area. Proton upset cross sections are reduced with increased device width.