Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices

摘要

It is shown that the correlation model developed in previous work to determine hot-carrier device lifetime from radiation-induced interface state data can be extended to lightly-doped drain (LDD) devices by selecting different, but equivalent, failure criteria. Excellent agreement between the model and experimental data is shown for LDD devices from several different manufacturers. These results indicate that a radiation test can be used as a quick alternative to a voltage stress test for predicting hot-carrier-induced device lifetime. Charge pumping measurement results are presented that demonstrate the basis for such a correlation.