Calibration procedure for irradiation tests on silicon devices

摘要

The problems of dosimetry encountered during irradiation tests on silicon devices using different radiation sources are discussed. The use of the p-i-n diode BPW 34 from Siemens as a calibration device is described. Its response and limitations at different radiation environments, bias voltages, and integrated absorbed doses are discussed. The experimental results on the dependence of the photocurrent on the bias voltage fitted with theoretical expectations.