Radiation-induced surface leakage currents in silicon microstrip detectors

摘要

After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO/sub 2/ interface. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The damage rate is measured to be 5/spl plusmn/1 nA/cm/sup 2//kRad for 20 keV X-rays.