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机译:利用增益,光致发光和深能级瞬态光谱研究GaAs器件中缺陷形成的实验研究
Sandia Nat. Labs., Albuquerque, NM, USA;
III-V semiconductors; crystal defects; deep level transient spectroscopy; gallium arsenide; ion beam effects; neutron effects; photoluminescence; semiconductor devices; GaAs; deep level transient spectroscopy; gain spectroscopy; gallium arsenide devices; ion irradiation; neutron irradiation; photoluminescence spectroscopy; structural defect information; Gallium arsenide; Laboratories; Neutrons; Photoluminescence; Probes; Radiation effects; Silicon; Ion radiation effects; radiation effects; semiconductor devices;
机译:通过光致发光和深能级瞬态光谱研究氧化物/ ZnO近界面缺陷
机译:氮离子辐照引起的n-GaAs缺陷的深能级瞬态光谱研究
机译:稀铜扩散的硅晶体中铜中心的形成和深度分布的深层瞬态光谱和光致发光研究
机译:用深水区瞬态光谱法通过分子束外延生长的块状GaN层中底物诱导深水位缺陷的研究
机译:用深层瞬态光谱法(DLTS)表征4H-SiC的缺陷及其对器件性能的影响
机译:在(100)和(311)B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
机译:用光致发光和深能级瞬态光谱研究氧化物/ ZnO近界面缺陷
机译:Gaas-alGaas超晶格中缺陷的深能级瞬态光谱研究