Investigation of Electrical Latchup and SEL Mechanisms at Low Temperature for Applications Down to 50 K

摘要

This paper presents a physical investigation of the mechanisms induced by the low temperature on single-event latchup in CMOS inverters for a range of technology nodes (250 nm from Sofradir and 180 nm from IBM). For the first time, the TCAD simulations show a good agreement of latchup characteristics with the experimental measurements at cryogenic temperatures. Additionally, a more robust technology provided by Sofradir was demonstrated.