机译:具有{mathrm {MoO}} _ {x}触点的基于CdTe的探测器的探测X和γ辐射的能力
Yury Fedkovych Chernivtsi National University, Chernivtsi, Ukraine;
Yury Fedkovych Chernivtsi National University, Chernivtsi, Ukraine;
Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany;
Yury Fedkovych Chernivtsi National University, Chernivtsi, Ukraine;
Yury Fedkovych Chernivtsi National University, Chernivtsi, Ukraine;
Yury Fedkovych Chernivtsi National University, Chernivtsi, Ukraine;
V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine;
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan;
Greek Atomic Energy Commission, Attiki, Greece;
Aristotle University of Salonica, Salonica, Greece;
II-VI semiconductor materials; Cadmium compounds; Detectors; Temperature; Surface treatment; Schottky diodes; Substrates;
机译:用TI和TiO_X肖特基触点的基于CDTE的X和γ射线探测器的电荷传输功能
机译:新型ZnO:Al接触Cdznte用于X-和伽马射线探测器
机译:未补偿杂质浓度对基于CdTe的X射线和γ射线探测器性能的影响
机译:基于CDTE的X /γ射线探测器的可能性MOO_X触点
机译:Cdznte辐射探测器上的金触点的制造与表征
机译:用于X射线和伽马射线探测器的新型ZnO:Al与CdZnTe的接触
机译:Cdznte检测器在混合伽马 - 中子辐射场中的热中子检测能力研究