Multiple Diode-Like Conduction in Resistive Switching SiO_x-Based MIM Devices

摘要

Filamentary conduction in resistive switching metal–insulator–metal devices is often modeled from the circuital viewpoint using diode-like structures with series resistances. We show in this letter which arrangement of diodes and resistances is compatible with experimental multilevel set and reset characteristics in electroformed TiN/SiO/TiN structures. The proposed model is based on the solution of the generalized diode equation corresponding to diodes arranged in parallel with a single series resistance. The model is simple yet accurate and it is able to capture the essential features exhibited by the curves in the low and high bias regimes, revealing that a single equation can deal with both the low and high resistance states. An exact expression for the differential conductance suitable for small-signal analysis and circuit simulators is also provided.