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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Uniplanar broad-band push-pull FET amplifiers
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Uniplanar broad-band push-pull FET amplifiers

机译:单平面宽带推挽FET放大器

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We report the development of completely uniplanar broadband balanced push-pull FET amplifiers using slot line and coplanar waveguide. The amplifiers employ broad-band uniplanar baluns to achieve the push-pull function over a wide bandwidth. One amplifier, designed in the unconditionally stable region, exhibits a gain of 3.5-5 dB over the frequency range of 5.4-10 GHz and an output 1-dB compression point of 19 dBm at 10 GHz. The other amplifier was designed in the potentially unstable range and achieves a high gain between 10-11 dB from 2 to 4 GHz and an output 1-dB compression point of 17 dBm at 4 GHz. These results show the feasibility of the push-pull FET amplifier configuration using uniplanar technology for microwave and millimeter-wave integrated circuits and systems.
机译:我们报告了使用缝隙线和共面波导的完全单平面宽带平衡推挽FET放大器的开发。放大器采用宽带单平面不平衡变压器,以在较宽的带宽上实现推挽功能。设计在无条件稳定区域中的一个放大器在5.4-10 GHz的频率范围内具有3.5-5 dB的增益,在10 GHz时的输出1dB压缩点为19 dBm。另一个放大器被设计在可能不稳定的范围内,并在2至4 GHz范围内实现10-11 dB之间的高增益,并在4 GHz处实现17 dBm的输出1 dB压缩点。这些结果表明了使用单平面技术的推挽FET放大器配置在微波和毫米波集成电路及系统中的可行性。

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