A compact and low-phase-noise Ka-band pHEMT-based VCO

摘要

A low phase-noise Ka-band monolithic voltage-controlled oscillator (VCO) designed using the negative resistance concept is reported. A circuit fabricated using the three-dimensional monolithic microwave integrated circuit technology exhibits a high integration level; its size is a record at just 0.5 mm/sup 2/. On-wafer measurements demonstrate a low phase noise of -102 dBc/Hz at a 1-MHz offset. The VCO delivers an output power of 11.8 dBm at the center frequency of 28.3 GHz. The frequency tuning range is more than 3.8 GHz. Dependence of the circuit performance on the bias conditions is also reported and suggests that an optimum phase-noise characteristic can be achieved when biasing the transistor to optimize its transconductance and noise figure.