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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Data Analysis of the Extraction of Dielectric Properties From Insulating Substrates Utilizing the Evanescent Perturbation Method
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Data Analysis of the Extraction of Dielectric Properties From Insulating Substrates Utilizing the Evanescent Perturbation Method

机译:利用van逝摄动法提取绝缘基板介电特性的数据分析

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The evanescent perturbation technique utilizing open-ended coaxial resonator probes was investigated as a non-destructive method for measuring the dielectric properties of insulating substrates in the microwave frequency region. As an investigative result, we have proposed a new formulaic method of data analysis by which the complex permittivity of samples, from changes in resonant frequency (f) and the quality factor of the resonance (Q), may be extracted in a concise and highly reproducible manner. The proposed formula has been developed based upon experimentation and detailed numerical studies of full-wave Maxwell equations coupled with physical observation and interpretation of experimental data. The new formula is applicable to both bulk and film samples with zero and finite tip-sample distances. The geometric factors derived were analyzed for variable parameters such as tip curvature, sample thickness, and tip-sample distance. Additionally, the calibration procedures necessary for experimental determination of these geometric factors were established.
机译:研究了使用开放式同轴谐振器探头的渐逝摄动技术,作为一种无损测量微波频率范围内绝缘基板介电性能的方法。作为调查结果,我们提出了一种新的数据分析公式化方法,通过该方法,可以简明且高度准确地从共振频率(f)和共振品质因数(Q)的变化中提取样品的复介电常数。可重复的方式。拟议的公式是在全波麦克斯韦方程组的实验和详细数值研究的基础上,结合物理观察和实验数据的解释而开发的。新公式适用于零距离和有限距离的尖端样品距离的散装和薄膜样品。分析得出的几何因子的可变参数,例如尖端曲率,样品厚度和尖端-样品距离。另外,建立了实验确定这些几何因素所必需的校准程序。

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