Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology

摘要

The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-$mu{hbox {m}}$ SiGe HBT process is presented. A high-resistivity silicon substrate (1000 $Omegacdot{hbox{cm}}$ ) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 ${hbox {mm}}^{2}$ and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.