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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A High-Performance CMOS Voltage-Controlled Oscillator for Ultra-Low-Voltage Operations
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A High-Performance CMOS Voltage-Controlled Oscillator for Ultra-Low-Voltage Operations

机译:用于超低压操作的高性能CMOS压控振荡器

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In this paper, a novel circuit topology of voltage-controlled oscillators (VCOs) suitable for ultra-low-voltage operations is presented. By utilizing the capacitive feedback and the forward-body-bias (FBB) technique, the proposed VCO can operate at reduced supply voltage and power consumption while maintaining remarkable circuit performance in terms of phase noise, tuning range, and output swing. Using a standard 0.18-mum CMOS process, a 5.6-GHz VCO is designed and fabricated for demonstration. Consuming a dc power of 3 mW from a 0.6-V supply voltage, the VCO exhibits a frequency tuning range of 8.1% and a phase noise of -118 dBc/Hz at 1-MHz offset frequency. With an FBB for the cross-coupled transistors, the fabricated circuit can operate at a supply voltage as low as 0.4 V. The measured tuning range and phase noise are 6.4% and -114 dBc/Hz, respectively
机译:在本文中,提出了一种适用于超低压操作的压控振荡器(VCO)的新型电路拓扑。通过利用电容反馈和前向体偏置(FBB)技术,所提出的VCO可以在降低的电源电压和功耗下工作,同时在相位噪声,调谐范围和输出摆幅方面保持出色的电路性能。采用标准的0.18微米CMOS工艺,设计并制造了5.6 GHz的VCO进行演示。在0.6V电源电压下消耗3mW的直流功率,VCO在1MHz偏移频率下表现出8.1%的频率调谐范围和-118 dBc / Hz的相位噪声。借助用于交叉耦合晶体管的FBB,所制造的电路可以在低至0.4 V的电源电压下工作。测得的调谐范围和相位噪声分别为6.4%和-114 dBc / Hz。

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