Analytical Extraction of Extrinsic and Intrinsic FET Parameters

摘要

The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional “cold FET” and “hot FET” modeling constraints and allows an ease in inline process tracking.