An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology

摘要

We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz ${bf f}_{bf T}$ SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76–77 and 77–81 GHz. The phase noise is ${-}$97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 $,times,$13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W.